Aluminum Scandium Nitride Films: Enabling Next-Gen Ferroelectric Memory Devices These films' high stability and superior ferroelectric properties at high-temperature H2-included heat treatment make them promising for next-generation ferroelectric memory devices.

Aluminum scandium nitride thin films could pave the way for the next generation of ferroelectric memory devices, according to a new study from Tokyo Tech. Compared to existing ferroelectric materials, these films maintain their ferroelectric properties and crystal structure even after heat treatment at temperatures up to 600 °C in both hydrogen and argon atmospheres. This high stability makes them ideal for high-temperature manufacturing processes under the H2-included atmosphere used in fabricating advanced memory devices.